features effective area: 18 mm 18 mm high cathode sensitivity luminous 200 a/lm typ. (r5900u-01 type) luminous 500 a/lm typ. (r5900u-20 type) high speed response wide dynamic range compact weight: approx. 33 g photomultiplier tube r5900u / r7600u series information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?007 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. high speed response, 30 mm square, bialkali and multialkali photocathode 10-stage, head-on type applications high energy physics flow cytometer (r5900u-01, -20 type) dna sequencer (r5900u-01, -20 type) pollution monitoring (nox) (r5900u-01, -20 type) figure 1: typical spectral response tpmhb0741eb tpmhb0742eb wavelength (nm) 100 200 300 400 500 600 700 800 900 1000 0.01 0.1 1 10 100 cathode radiant sensitivity (ma/w) quantum efficiency (%) r5900u-20 r5900u-01 cathode radiant sensitivity quantum efficiency r5900u-04 wavelength (nm) 100 200 300 400 500 600 700 800 900 1000 0.01 0.1 1 10 100 cathode radiant sensitivity (ma/w) quantum efficiency (%) r7600u r7600p R7600U-03 cathode radiant sensitivity quantum efficiency
photomultiplier tube r5900u / r7600u series figure 2: typical gain tpmhb0265ef figure 3: time response (example) tpmhb0263ed time (2 ns/div) output voltage (20 mv/div) supply voltage: 800 v rise time: 1.5 ns fall time: 2.7 ns width: 3.2 ns r l : 50 ? figure 4: single photon counting (example) tpmhb0776ea 400 600 800 1000 supply voltage (v) 10 0 gain 10 1 10 2 10 3 10 4 10 5 10 6 10 7 10 8 r7600u R7600U-03 r7600p r5900u-01 r5900u-04 r5900u-20 pulse height / channel number (ch) counts per channel 0 0 200 400 600 800 1000 0.1 0.2 0.3 type: r7600p photon + dark counts: 4934 s -1 dark counts: 109 s -1 wavelength of incident light: 400 nm supply voltage: 800 v dark photon + dark a ba: bialkali, ma: multialkali b k: borosilicate glass, u: uv glass c mc: metal channel d the maximum operating ambient temperature range is -30 c to +50 c note: cd b a spectral response maximum ratings cathode characteristics (nm) peak wavelength (nm) range photo- cathode material window material 300 to 650 300 to 850 185 to 650 185 to 880 300 to 920 300 to 650 420 420 420 420 530 420 k k u u k k ba ma ba ma ma ba r7600u r5900u-01 R7600U-03 r5900u-04 r5900u-20 r7600p type no. mc/10 mc/10 mc/10 mc/10 mc/10 mc/10 0.1 0.1 0.1 0.1 0.1 0.1 900 900 900 900 900 900 60 150 60 150 350 60 80 200 80 200 500 80 9.5 9.5 9.5 0.25 0.25 0.4 80 65 80 65 78 80 ( a/lm) min. ( a/lm) typ. luminous (ma/w) blue sensitivity index (cs 5-58) red/ white ratio (r-68) radiant typ. typ. typ. (v) (ma) dynode structure / stages supply voltage between anode and cathode average anode output current in total
figure 6: effect of magnetic fields on anode output (example) tpmhb0261ee voltage distribution ratio and supply voltage supply voltage: 800 v, k: cathode, dy: dynode, p: anode electrodes ratio k dy1 1.5 dy2 1.5 dy3 1.5 dy4 1 dy5 1 dy6 1 dy7 11 dy8 dy9 dy10 p 111 figure 5: tts characteristic (example) tpmhb0264ec -80 -60 -40 -20 0 20 40 60 80 0 20 40 60 80 100 110 magnetic flux density (mt) relative output (%) ebb: -800 v y-axis z-axis x-axis y x + + + z guide corner (at rear side) top view time (0.5 ns/div) relative counts supply voltage: 800 v fwhm: 0.35 ns fwtm: 0.72 ns 10 0 10 1 10 2 10 3 10 4 anode characteristics pulse linearity type no. (a/lm) min. (a/lm) typ. luminous dark current (after 30 min) gain typ. (na) typ. typ. typ. typ. (na) max. time response (ns) rise time (ns) transit time (ns) tts (ma) 2 % deviation (v) anode to cathode supply voltage r7600u r5900u-01 R7600U-03 r5900u-04 r5900u-20 r7600p 40 50 40 50 100 40 160 200 160 200 500 160 2.0 10 6 1.0 10 6 2.0 10 6 1.0 10 6 1.0 10 6 2.0 10 6 2 10 2 10 20 20 50 20 50 50 dark count typ. max. 200 500 1.4 9.6 0.35 30 (ma) 5 % deviation 60 800 800 800 800 800 800
figure 7: dimensional outline and basing diagram (unit: mm) tpmha0278ei photomultiplier tube r5900u / r7600u series tpmh1291e03 sept. 2007 ip [accessories] (unit: mm) scoket e678-32b d type scoket assembly e5996 tacca0094ed tacca0234ec * patent: usa: 5410211 and other(9), gbr: 551767 and other(9), deu: 69209809 and other(9), fra: 551767 and other(9), jpn: 30789 05 and other(9) warning ~ high voltage ~ the product is operated at high voltage potential. further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded ). accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instr uments. 22.86 20.32 20.32 22.86 12.7 2.54 12.7 2.92 4.45 1.57 0.51 material: glass epoxy side view bottom view top view 0.6 0.4 22.0 0.5 30.0 0.5 18 min. 4.4 0.7 12.0 0.5 photocathode insulation cover 2.54 pitch 29- 0.45 effective area 25.7 0.5 basing diagram k dy p cut ic : photocathode : dynode : anode : short pin : internal connection (don't use) ic ic p ic ic ic ic ic ic ic ic ic ic ic 123456789 32 10 31 11 30 12 29 13 28 14 27 15 26 16 25 17 24 23 22 21 20 19 18 k ic (dy10) ic dy1 dy2 dy3 dy4 ic (dy10) cut (k) cut (k) dy10 dy9 dy8 dy7 dy6 dy5 ic (dy10) cut (k) guide corner 4 max. 30.0 0.5 30.0 0.5 15.0 0.5 450 r1 to r3 r4 to r11 r12 to r14 r15 c1 to c3 : 330 k ? : 220 k ? : 51 ? : 1 m ? : 10 nf dy10 30 24 23 22 21 20 19 7 6 5 4 1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 k c3 p power supply gnd c2 c1 r11 r9 r8 r7 r6 r5 r4 r3 r2 r1 r10 r14 r12 r15 r13 signal output rg-174/u (black) - hv : rg-174u (red) pmt socket pin no. signal gnd pin no.1 housing (insulator) sold separately hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site www.hamamatsu.com
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